Amorphous hydrogenated silicon-germanium alloy …
There were many problems associated with the deposition of amorphous hydrogenated silicon-germanium alloys (a.Si sub 1-x Ge sub x: H) that have good photoelectronic properties. Previous studies have shown that the addition of germanium creates defect states that could not be adequately compensated with hydrogen. To address these problems a dual magnetron sputtering system was …
Characterization of hydrogenated amorphous …
Hydrogenated nonstoichiometric germanium materials have been produced by x-ray activated-chemical vapor deposition from germane. The reactions pattern leading to the solid products has been investigated. The dose effect on the composition, the local bonding configuration, and structural characteristics of the deposited solids has been studied using infrared absorption and Raman …
Characterization of hydrogenated amorphous …
OSTI.GOV Journal Article: Characterization of hydrogenated amorphous germanium compounds obtained by x-ray stone vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order
Preparation and characterization of hydrogenated …
16-7-2020 · Hydrogenated amorphous germanium (a-Ge:H) and germanium carbide (a-Ge{sub 1{minus}x}C{sub x}:H) films were prepared by rf sputtering of a polycrystalline Ge target in a vacuum {approximately}4 {times} 10{sup {minus}7} Torr at various rf power, target-substrate distance, varying partial pressures of ...
Structural, optical, and electrical properties of ...
Hydrogenated amorphous silicon germanium alloys (a-SiGe:H) have been prepared by rf glow discharge of silane, germane, and hydrogen gas mixture at substrate temperature of 200 and 250 °C. The structural properties of the films have been investigated by infrared, Raman, and secondary ion mass spectroscopy. It is found that there is a preferential incorporation of germanium into the film ...
Germanium Compounds - an overview | …
Germanium compounds containing dithiocarbonate 179 and dithiophosphate 180,181 ligands which have Ge–S bonds have been prepared and structurally characterized. Compounds containing germanium and other group 14 elements held together by chalcogenide bridges have been synthesized such as the heavy bicyclo[2.2.2]octane derivatives which contain germanium and silicon in the …
Hydrogenated amorphous germanium and its alloys
Hydrogenated amorphous germanium and its alloys A75 high photo-to-dark conductivity ratio is a necessary but not a sufficient condition for a good photovoltaic material. The majority carrier mobility-lifetime product may be artificially increased by defect centres that kill the transport properties of the opposite carrier. As the collection of both carriers is essential in solar cells a more ...
Charge transport in nanocrystalline …
N2 - Mixed phase thin films consisting of hydrogenated amorphous silicon (a-Si:H) in which germanium nanocrystals (nc-Ge) are embedded have been synthesized using a dual-chamber codeposition system. Raman spectroscopy and x-ray diffraction measurements confirm the presence of 4-4.5 nm diameter nc-Ge homogenously embedded within the a-Si:H matrix.
US4792460A - Method for production of …
A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium.
Germanium - Wikipedia
Germanium is een scheikundig element met als symbool Ge en atoomnummer 32. Het is een vrij hard grijswit metalloïde, dat behoort tot de koolstofgroep.Zuiver germanium is een halfgeleider.. Net zoals het vergelijkbare element silicium komt het in de natuur niet in zuivere vorm voor, maar gebonden aan andere elementen, zoals zuurstof.Het komt voor in verschillende mineralen, zoals argyrodiet ...
US20050089686A1 - Low-temperature plasma …
A method of forming a hydrogenated amorphous germanium carbon (α-GeC x g:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (α-GeC x :H) film on a surface …
Mössbauer study of hydrogenated amorphous germanium‐tin ...
MOssbauer study of hydrogenated amorphous germanium-tin thin .. film aUoys L Chambouleyron and F. C. Marques Instituto de Fisica, Uniuersidade Estadual de Campinas, P. O. Box 6165, Campinas, S. P. 13081, Brazil P. H. Dionisio and I. J. R. Baumvol Instituto de Fisica, Uniuersidade Federal de Rio Grande do Sui, Porto Alegre, R. S. 90049, Brazil
Local Order in Hydrogenated Amorphous Germanium Thin Films
Local Order in Hydrogenated Amorphous Germanium Thin Films G. Dalba, P. Fornasini, ... been reconstructed for the hydrogenated samples and compared with that of the non hydrogenated compound…
Characterization of hydrogenated amorphous …
Characterization of hydrogenated amorphous germanium compounds obtained by x-ray stone vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order
WebElements Periodic Table » Germanium » …
In compounds of germanium (where known), the most common oxidation numbers of germanium are: 4, 2, and -4. Hydrides. The term hydride is used to indicate compounds of the type M x H y and not necessarily to indicate that any compounds listed behave as hydrides chemically.
Germanium Compounds | Gelest, Inc.
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Germanium Compounds | Inorganic Compounds | …
Germanium dioxide is also used as a catalyst in the manufacturing of polyethylene terephthalate (PET) resins, and for the production of other germanium compounds, phosphors, …
Transition from Amorphous Semiconductor to …
Amorphous hydrogenated carbon−germanium films (a-GeXCY:H) were fabricated by plasma stone vapor deposition in an audio frequency (af) three-electrode reactor using tetramethylgermane (TMGe) as a source compound. Two types of the material, namely semiconducting (a-S) and insulating (a-I) films characterized by quite different electronic properties, were produced.
Determination of the Trap State Density …
Determination of the Trap State Density Differences in Hydrogenated Amorphous Silicon-Germanium Alloys - Volume 20 Issue 1 - M. Boshta, K. Bärner, R. Braunstein, B. Alavi, B. Nelson
Low-temperature plasma deposited hydrogenated …
4-3-2004 · A method of forming a hydrogenated amorphous germanium carbon (a-Gec x:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided.The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (a-GeC x:H) film on a surface …